Research focus is in electronic materials, including temperature dependent electrical conductivity, Seebeck coefficient, thermal conductivity, Hall effect, and current vs. voltage measurements for materials and devices. Areas of research have included single crystal diamond, thermoelectric materials, oxide nanowires, and surface enhanced Raman spectroscopy. Experimental techniques include pulsed laser deposition, laser micromachining, cleanroom procedures, solid state reactions, powder processing, spark plasma sintering, and high temperature high pressure pressing/annealing.
National Science Foundation CAREER Award, 2001
Withrow Award for Distinguished Scholarship, Michigan State University, 2002
Elected Senior Member to the Institute of Electrical and Electronics Engineers (IEEE), 2002
Teacher Scholar Award, Michigan State University, 2004
Withrow Award for Teaching Excellence, Michigan State University, 2009
Withrow Award for Teaching Excellence, Michigan State University, 2011
Ph.D., Northwestern University 1996
A. Kaur, P. Chahal, T. Hogan “Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions,” IEEE Electron Device Letters, 37(2), pp. 142-145, (2016).
P. Gao, J. Davis, V. Poltavets, T. Hogan, “The p-type Mg2LixSi0.4Sn0.6 Thermoelectric Materials Synthesized by a B2O3 Encapsulation Method Using Li2CO3 as the Doping Agent,” Journal of Meterials Chemistry C, 4(5), pp. 929-934, (2016).
N. Wachter, C. Munson, R. Jarosova, I. Berkun, T. Hogan, R. Rocha-Filho, G. Swain, “Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode,” ACS Applied Materials & Interfaces, 8(42), pp. 28325-28337, (2016).
P. Gao, X. Lu, I. Berkun, R. D. Schmidt, E. D. Case, T. P. Hogan, “Reduced Lattice Thermal Conductivity in Bi-Doped Mg2Si0.4Sn0.6,” Applied Physics Letters, 105(20), pp. 202104-1 – 202104-5, (2014).
P. Gao, I. Berkun, R. D. Schmidt, M. F. Luzenski, X. Lu, P. B. Sarac, E. D. Case, T. P. Hogan, “Transport and Mechanical Properties of High-ZT Mg2.08Si0.4-xSn0.6Sbx Thermoelectric Materials,” Journal of Electronic Materials, 43(6), pp. 1790-1803, (2014).
R. J. Korkosz, T. C. Chasapis, S.-H. Lo, J. W. Doak, Y. J. Kim, C.-I. Wu, E. Hatzikraniotis, T. P. Hogan, D. N. Seidman, C. Wolverton, V. P. Dravid, M. G. Kanatzidis, “High ZT in p-type (PbTe)1-2x(PbSe)x(PbS)x Thermoelectric Materials,” Journal of the American Chemical Society, 136(8), pp. 3225-3237, (2014).