Dr. Grotjohn received his Ph.D. in electrical engineering from Purdue University in 1986. He joined the Department of Electrical and Computer Engineering at Michigan State University as a faculty member in 1987. He is currently Professor in the ECE Department where he works on diamond process and device research and development. He served for 9 years as the Department Chairperson and for six years as the R&D Director of the Fraunhofer USA Center for Coatings and Diamond Technologies located at MSU. His current research activities include microwave plasma studies for materials processing, diamond deposition reactor design, diamond process R&D for doped and undoped diamond, and diamond device design and development including diodes, transistors, quantum sensors and high energy particle detectors. He has published 70 journal papers and over 250 conference paper. He has also received 14 patents.
Biography
Research Area
Awards
Technology Transfer Achievement Award, Michigan State University, 2021
Withrow Exceptional Service Award, College of Engineering, Michigan State University, 2005.
Withrow Distinguished Scholar Award, College of Engineering, Michigan State University, 2004.
Withrow Excellence in Teaching Award, Electrical & Computer Engineering, College of Engineering, Michigan State University, 2002.
Education
Ph.D., Electrical Engineering, Purdue University 1986
M.S., Electrical Engineering, University of Minnesota 1984
B.E.E., Electrical Engineering, University of Minnesota 1982
Publications
A. Bhattacharya, T. A. Grotjohn and A. Stolz, Degradation of single crystal diamond detectors in swift heavy ion beams, Diamond and Related Materials, 70, 124-131 (2016).
Y. Zhou, J. Anaya, J. Pomeroy, H.R. Sun, X. Gu, A.D. Xie, E. Beam, M. Becker, T.A. Grotjohn, C. Lee, M. Kuball, Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling, ACS Applied Materials and Interfaces, 9, pp. 34416-34422, (2017).
J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, .. T. A. Grotjohn, et.al., Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges, Advanced Electronic Materials, 4, 1600501 (2018).
M. W. Geis, T.H. Fedynyshyn, M.E. Plaut, T.C. Wade, C.H. Wuorio, S. A. Vitale, J.O. Varghese, T.A. Grotjohn, R.J. Nemanich and M.A.Hollis, Chemical and semiconducting properties of NO2-activated H-terminated Diamond, Diamond & Related Materials, 84, 86-94 (2018).
Cho, SJ; Liu, D; Hardy, A; Kim, J; Gong, JR; Herrera-Rodriguez, CJ; Swinnich, E; Konstantinou, X; Oh, GY; Kim, DG; Shin, JC; Papapolymerou, J; Becker, M; Seo, JH; Albrecht, JD; Grotjohn, TA; Ma, ZQ, Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs, AIP Advances, 10, 125226, 2020.
Primary Department
