*----------------------------------------------------------------------------- * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | output * | | | | | .subckt uA741 1 2 3 4 5 * c1 11 12 8.661E-12 c2 6 7 30.00E-12 dc 5 53 dx de 54 5 dx dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 10.61E6 -10E6 10E6 10E6 -10E6 ga 6 0 11 12 188.5E-6 gcm 0 6 10 99 5.961E-9 iee 10 4 dc 15.16E-6 hlim 90 0 vlim 1K q1 11 2 13 qx q2 12 1 14 qx r2 6 9 100.0E3 rc1 3 11 5.305E3 rc2 3 12 5.305E3 re1 13 10 1.836E3 re2 14 10 1.836E3 ree 10 99 13.19E6 ro1 8 5 50 ro2 7 99 100 rp 3 4 18.16E3 vb 9 0 dc 0 vc 3 53 dc 1 ve 54 4 dc 1 vlim 7 8 dc 0 vlp 91 0 dc 40 vln 0 92 dc 40 .model dx D(Is=800.0E-18 Rs=1) .model qx NPN(Is=800.0E-18 Bf=93.75) .ends *$ *----------------------------------------------------------------------------- * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | output * | | | | | .subckt LF411 1 2 3 4 5 * c1 11 12 4.196E-12 c2 6 7 10.00E-12 css 10 99 1.333E-12 dc 5 53 dx de 54 5 dx dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 31.83E6 -30E6 30E6 30E6 -30E6 ga 6 0 11 12 251.4E-6 gcm 0 6 10 99 2.514E-9 iss 10 4 dc 170.0E-6 hlim 90 0 vlim 1K j1 11 2 10 jx j2 12 1 10 jx r2 6 9 100.0E3 rd1 3 11 3.978E3 rd2 3 12 3.978E3 ro1 8 5 50 ro2 7 99 25 rp 3 4 15.00E3 rss 10 99 1.176E6 vb 9 0 dc 0 vc 3 53 dc 1.500 ve 54 4 dc 1.500 vlim 7 8 dc 0 vlp 91 0 dc 25 vln 0 92 dc 25 .model dx D(Is=800.0E-18 Rs=1m) .model jx NJF(Is=12.50E-12 Beta=743.3E-6 Vto=-1) .ends * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | output * | | | | | .subckt TL074 1 2 3 4 5 * c1 11 12 2.412E-12 c2 6 7 18.00E-12 css 10 99 5.400E-12 dc 5 53 dx de 54 5 dx dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 3.467E6 -3E6 3E6 3E6 -3E6 ga 6 0 11 12 339.3E-6 gcm 0 6 10 99 17.01E-9 iss 10 4 dc 234.0E-6 hlim 90 0 vlim 1K j1 11 2 10 jx j2 12 1 10 jx r2 6 9 100.0E3 rd1 3 11 2.947E3 rd2 3 12 2.947E3 ro1 8 5 50 ro2 7 99 170 rp 3 4 20.00E3 rss 10 99 854.7E3 vb 9 0 dc 0 vc 3 53 dc 1.500 ve 54 4 dc 1.500 vlim 7 8 dc 0 vlp 91 0 dc 50 vln 0 92 dc 50 .model dx D(Is=800.0E-18 Rs=1) .model jx NJF(Is=2.500E-12 Beta=984.2E-6 Vto=-1) .ends * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | open collector output * | | | | | .subckt LM139 1 2 3 4 5 * f1 9 3 v1 1 iee 3 7 dc 100.0E-6 vi1 21 1 dc .75 vi2 22 2 dc .75 q1 9 21 7 qin q2 8 22 7 qin q3 9 8 4 qmo q4 8 8 4 qmi .model qin PNP(Is=800.0E-18 Bf=2.000E3) .model qmi NPN(Is=800.0E-18 Bf=1002) .model qmo NPN(Is=800.0E-18 Bf=1000 Cjc=1E-15 Tr=475.4E-9) e1 10 4 9 4 1 v1 10 11 dc 0 q5 5 11 4 qoc .model qoc NPN(Is=800.0E-18 Bf=20.69E3 Cjc=1E-15 Tf=3.540E-9 Tr=472.8E-9) dp 4 3 dx rp 3 4 37.50E3 .model dx D(Is=800.0E-18 Rs=1) * .ends *$ .SUBCKT SE555 1 2 3 4 5 6 7 8 * GND TR OUT RS CON TH DIS VCC R1 8 35 4.7K R2 8 10 830 R3 8 12 4.7K R4 8 13 1K R5 22 1 10K R6 28 1 100K R7 8 5 5K R8 5 29 5K R9 29 1 5K R10 20 32 7K R11 30 19 4.7K R12 8 16 6.8K R13 18 3 3.9K R14 33 34 220 R15 33 1 4.7K R16 24 33 100 Q1 9 6 23 1 SE555QA Q2 9 23 22 1 SE555QA Q3 11 21 22 1 SE555QA Q4 11 5 21 1 SE555QA Q5 9 9 35 1 SE555QB Q6 30 9 10 1 SE555QB Q7 1 11 10 1 SE555QB Q8 11 11 12 1 SE555QB Q9 26 20 13 1 SE555QB Q10 1 2 25 1 SE555QB Q11 28 25 26 1 SE555QB Q12 1 27 26 1 SE555QB Q13 1 29 27 1 SE555QB Q14 7 24 1 1 SE555QA Q15 30 28 1 1 SE555QA Q16 31 30 1 1 SE555QA Q17 19 31 1 1 SE555QA Q18 32 32 31 1 SE555QA Q19A 20 20 8 1 SE555QB Q19B 19 20 8 1 SE555QB Q20 16 19 33 1 SE555QA Q21 8 16 18 1 SE555QA Q22 8 18 3 1 SE555QA Q23 3 3 16 1 SE555QA Q24 3 34 1 1 SE555QA Q25 24 4 32 1 SE555QB .MODEL SE555QA NPN(BF=100 IS=1.26E-15 VAF=180 CJE=.65P CJC=.36P + TF=1.15N TR=405N CCS=3.2p RB=1 RC=8) .MODEL SE555QB PNP(BF=75 IS=3.15E-15 VAF=55 CJE=.1P CJC=1.05P + TF=27.4N TR=2540N CCS=5.1p RB=1 RC=8) .ENDS SE555 .model D1N754 D(Is=1.616f Rs=1.818 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=120p M=.5117 + Vj=.75 Fc=.5 Isr=1.698n Nr=2 Bv=6.8 Ibv=2.8814 Nbv=.28248 + Ibvl=1.9426e-6 Nbvl=.27168 Tbv1=485.29u) * Motorola pid=1N754 case=DO-35 * 89-9-19 gjg * Vz = 6.8 @ 20mA, Zz = 9.1 @ 1mA, Zz = 3.5 @ 5mA, Zz = 2 @ 20mA .model D1N756 D(Is=2.453f Rs=2.9 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=90p M=.448 + Vj=.75 Fc=.5 Isr=1.803n Nr=2 Bv=8.2 Ibv=1.5593 Nbv=.51406 + Ibvl=8.3521e-5 Nbvl=.1313 Tbv1=585.366u) * Motorola pid=1N756 case=DO-35 * 89-9-19 gjg * Vz = 8.2 @ 20mA, Zz = 16 @ 1mA, Zz = 6.9 @ 5mA, Zz = 2.5 @ 20mA .model D1N914 D(Is=168.1E-21 N=1 Rs=.1 Ikf=0 Xti=3 Eg=1.11 Cjo=4p M=.3333 + Vj=.75 Fc=.5 Isr=100p Nr=2 Bv=100 Ibv=100u Tt=11.54n) .model D1N967A D(Is=7.021f Rs=5.619 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=60p M=.4093 + Vj=.75 Fc=.5 Isr=1.461n Nr=2 Bv=18 Ibv=23.333m Nbv=1.2074 + Ibvl=215.7u Nbvl=.71348 Tbv1=888.9u) * Motorola pid=1N967A case=DO-35 * 89-9-18 gjg * Vz = 18 @ 7mA, Zz = 37 @ 1mA, Zz = 11 @ 5mA, Zz = 7.9 @ 20mA *$ .model D1N4001 D(Is=14.11n N=1.984 Rs=33.89m Ikf=94.81 Xti=3 Eg=1.11 + Cjo=25.89p M=.44 Vj=.3245 Fc=.5 Bv=75 Ibv=10u Tt=5.7u) * Motorola * Semiconductor Databook (mid 1970s) * 03 Jun 91 pwt creation *$ .model D1N4002 ako:D1N4001 D(Bv=150) ; use non-rep. peak voltage *$ .model D1N4003 ako:D1N4001 D(Bv=300) ; use non-rep. peak voltage *$ .model D1N4004 ako:D1N4001 D(Bv=600) ; use non-rep. peak voltage *$ .model D1N4005 ako:D1N4001 D(Bv=900) ; use non-rep. peak voltage *$ .model D1N4006 ako:D1N4001 D(Bv=1200) ; use non-rep. peak voltage * .MODEL D1N4148 D(Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Xti=3 Eg=1.11 + Cjo=4p M=.3333 Vj=.5 Fc=.5 Isr=1.565n Nr=2 Bv=100 Ibv=100u Tt=11.54n) * .model D1N4742 D(Is=1.773f Rs=2.06 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=100p M=.3894 + Vj=.75 Fc=.5 Isr=1.799n Nr=2 Bv=12 Ibv=89.447m Nbv=1.1527 + Ibvl=248.34n Nbvl=.8248 Tbv1=700u) * Motorola pid=1N4742 case=DO-41 * 89-9-19 gjg * Vz = 12 @ 21mA, Zz = 32 @ 1mA, Zz = 7.5 @ 5mA, Zz = 4 @ 20mA .model D1N4745 D(Is=5.461f Rs=4.974 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=68p M=.3197 + Vj=.75 Fc=.5 Isr=1.982n Nr=2 Bv=16 Ibv=.25684 Nbv=1.0588 + Ibvl=1.029m Nbvl=1.0409 Tbv1=875u) * Motorola pid=1N4745 case=DO-41 * 89-9-19 gjg * Vz = 16 @ 15.5mA, Zz = 32.5 @ 1mA, Zz = 9.8 @ 5mA, Zz = 6.9 @ 20mA .model MBR1035 D(Is=168.4n Rs=8.013m Ikf=1.121 N=1 Xti=0 Eg=1.11 Cjo=888.9p + M=.4639 Vj=.75 Fc=.5 Isr=6.634u Nr=2) * Motorola pid=MBR1035 case=TO220AC * 88-09-15 rmn .model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 + Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 + Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 + Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) * National pid=23 case=TO92 * 88-09-08 bam creation .model Q2N3906 PNP(Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 + Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p + Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n + Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) * National pid=66 case=TO92 * 88-09-09 bam creation .model TIP31 NPN(Is=2.447p Xti=3 Eg=1.11 Vaf=100 Bf=208.2 Ise=70.69p + Ne=1.565 Ikf=.9743 Nk=.6134 Xtb=1.5 Br=12.59 Isc=11.68n + Nc=1.835 Ikr=3.86 Rc=.4685 Cjc=142p Mjc=.4353 Vjc=.75 Fc=.5 + Cje=188.5p Mje=.4878 Vje=.75 Tr=194.2n Tf=19.85n Itf=164.1 + Xtf=5.945 Vtf=10 Rb=.1) * National Semiconductor * Transistor Databook, 1982, process 4F, pg 9-13 * 30 Nov 90 pwt creation .model TIP32 PNP(Is=51.23f Xti=3 Eg=1.11 Vaf=100 Bf=434.1 Ise=51.23f Ne=1.22 + Ikf=.3883 Nk=.5544 Xtb=2.2 Br=55.47 Isc=51.23f Nc=1.205 + Ikr=10.87 Rc=.3443 Cjc=136.9p Mjc=.3155 Vjc=.75 Fc=.5 + Cje=179.9p Mje=.4294 Vje=.75 Tr=20.25n Tf=13.05n Itf=6.85 + Xtf=1.573 Vtf=10 Rb=.1) * National Semiconductor * Transistor Databook, 1982, process 5F, pg 9-36 * 30 Nov 90 pwt creation .model IRF530 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 + Tox=100n Uo=600 Phi=.6 Rs=58.53m Kp=20.73u W=.68 L=2u Vto=3.191 + Rd=38.69m Rds=444.4K Cbd=1.151n Pb=.8 Mj=.5 Fc=.5 Cgso=876.7p + Cgdo=261.4p Rg=4.63 Is=1.861p N=1 Tt=125n) * Int'l Rectifier pid=IRFC130 case=TO220 * 88-08-25 bam creation .model IRF9530 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 + Tox=100n Uo=300 Phi=.6 Rs=.1576 Kp=10.57u W=1.4 L=2u Vto=-3.745 + Rd=66.13m Rds=444.4K Cbd=1.249n Pb=.8 Mj=.5 Fc=.5 Cgso=1.578n + Cgdo=115.5p Rg=3.519 Is=2.938E-18 N=2 Tt=290n) * Int'l Rectifier pid=IRFC9130 case=TO220 * 88-08-25 bam creation ** 100khz frequency standard, DT cut, parallel resonant, Q=20000 * calibration capacitance = 5pf .subckt QZP100K 1 2 * lqz 1 11 lmod 588.873289 .model lmod ind(tc2=3.5e-8) cs 11 12 4.30423941e-015 rqz 12 2 18.5k cp 1 2 1.72169576e-012 .ends *----------------------------------------------------------------------- * Filename: G12H100.inc V3 3/7/97 * Simulator: PSpice * Device type: Loudspeaker * Device model: Celestion G12H-100 * * Author: Duncan Munro * Date: 30/6/97 * Copyright: (C)1997 DDS * * The model reflects the change of impedance as presented to * the amplifier with frequency. * * Please note that this model is provided "as is" and * no warranty is provided in respect of its suitability * for any application. * * This model is provided for educational and non-profit use. * * The model is not endorsed or supported by Celestion. All trademarks * acknowledged. * * Email queries to duncan@muffy.demon.co.uk * *----------------------------------------------------------------------- .SUBCKT G12H100 A B R_RL A 2 6.5 R_RD1 2 3 13 L_LD1 3 2 20mH C_CD1 2 3 190u R_RD2 3 4 1 C_CD2 3 4 50u L_LD2 4 3 100uH L_LD3 B 4 100uH R_RD3 B 4 20 .ENDS G12H100