P. Adusumilli, L. J. Lauhon, D. N. Seidman, C. E. Murray, O. Avayu, Y. Rosenwaks
Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison’s type-B regime, is found after silicidation to form(Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99Pt0.01)Si/Si(100)interface, which may be responsible for the increased resistance of (Ni0.99Pt0.01)Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.
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