Surface Effects in Layered Semiconductors Bi2Se3 and Bi2Te3

Author:
S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, T. Kyratsi, M. G. Kanatzidis

Year:
2004

Abstract:

 Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

URL:
Link to article - American Physical Society

Document:
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