POLY-DIAMOND SENSORS
Poly-diamond microsensors are expected to outperform
their Si counterparts in sensitivity, especially in harsh environments
and at high temperatures. Researchers from Michigan State University
developed an IC-compatible diamond film technology (ICDT), and they were
the first to (i) measure THE piezoresistive gauge factor (GF) and (ii)
report a GF above 4000 in poly-diamond.

POLY-DIAMOND MEMS
Due to diamond?s low friction coefficient, high
thermal conductivity, chemical and mechanical stability, and large band
gap, diamond MEMS are expected to outperform their Si counterparts.
Using an IC-compatible poly-diamond technology, MSU researchers have
designed and fabricated poly-diamond MEMS structures for the first time.


References
MNEC Publications Related to Poly-Diamond Sensors
and MEMS include:
- S. Sahli and D.M. Aslam, ?Ultra-high
Sensitivity Intra-Grain Poly-Diamond Piezoresistors", Sensors
and Actuators: A, vol. 71/3, 193-197(1998).
- S. Sahli and D.M. Aslam, ?Piezoresistive
Pressure Microsensors Using P-Type Polycrystalline Diamond Films?,
Sensors and Actuators: A, vol. 69/1, 27-32(1998).
- G. Yang and D.M. Aslam, ?Single-Structure
Heater and Temperature Sensor Using a p-Type Polycrsytalline Diamond
Resistor?, IEEE Electron Dev. Lett. 17(5), 250-252 (1996).
- G.S. Yang, M. Aslam, K.P. Kuo, D.K. Reinhard
and J. Asmussen, ?Effect of Ultra-High Nucleation Density on Diamond
Growth at Different Growth Rates and Temperatures", J. Vac. Sci.
Technol. B, vol. 13, 1030(1995).
- S.Yang and M. Aslam, "Ultra-High
Nucleation for Growth Smooth Diamond Films", Appl. Phys. Lett.,
66 (3), 311(1995).
- M. Aslam, G.S. Yang and A. Masood,
?Boron-Doped Vapor-Deposited Diamond Temperature Microsensors?,
Sensors and Actuators A, vol. 45 (2), pp. 131-138, 1994.
- I. Taher, M. Aslam, M. Tamor, "Piezoresistive
Microsensors using p-type CVD Diamond Films", Sensors and
Actuators A, vol. 45 (1), 35-43, 1994.
- M. Aslam and D. Schulz, "Technology of
Diamond Microelectromechanical Systems", Technical Digest: 8th
Int. Conf. Solid-State Sensor & Actu., Stockholm (Sweden), Vol.
2, 222-224 (1995).
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